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Li JB, Sun CY, Zhang QY, et al. Research progress and prospects of snte-based thermoelectric materials and devices [J]. Journal of Integration Technology, xxxx, x(x): 1-17. DOI: 10.12146/j.issn.2095-3135.20250629002
Citation: Li JB, Sun CY, Zhang QY, et al. Research progress and prospects of snte-based thermoelectric materials and devices [J]. Journal of Integration Technology, xxxx, x(x): 1-17. DOI: 10.12146/j.issn.2095-3135.20250629002

Research Progress and Prospects of SnTe-based Thermoelectric Materials and Devices

  • SnTe materials are of interest in the thermoelectric field due to their environmentally friendly, non-toxic properties and multivalent band structure. Currently, the thermoelectric figure of merit of SnTe has been significantly improved through carrier concentration optimization, band structure engineering, and multi-scale defect construction. Following interface material design and welding process optimization, SnTe-based thermoelectric modules with conversion efficiencies of ~10% have been developed. This review begins by examining the crystal and electronic band structure characteristics of SnTe. It then details strategies for optimizing the strategy of SnTe-based materials, discusses the challenges associated with selecting interface materials for SnTe-based devices, and summarizes the construction approaches of SnTe-based thermoelectric devices. Finally, it presents an outlook on the future research for SnTe thermoelectric materials and devices.
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